Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N60CTM Power Field Effect Transistor, MOSFET, N-channel, 1A, 600 V, 9.3 ohm, 10 V, 2 V56405+$2.756725+$2.552550+$2.4096100+$2.3483500+$2.30752500+$2.25645000+$2.236010000+$2.2054 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH085N80_F155 Power Field Effect Transistor, MOSFET, N-channel, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V New96641+$104.231410+$99.6996100+$98.8839250+$98.2494500+$97.25241000+$96.79922500+$96.16485000+$95.6210 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQU1N60CTU Power Field Effect Transistor, MOSFET, N-channel, 1A, 600 V, 2.8 ohm, 10 V, 4 V51295+$1.772625+$1.641350+$1.5493100+$1.5100500+$1.48372500+$1.45095000+$1.437710000+$1.4180 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF150N65F Power MOSFET, N Channel, 24A, 650V, 0.133Ω, 10V, 5V70521+$40.212410+$37.9052100+$36.1912250+$35.9275500+$35.66381000+$35.36722500+$35.10355000+$34.9387 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQPF7N65C Power Field Effect Transistor, MOSFET, N-channel, 7 A, 650 V, 1.2 ohm, 10 V, 4 V941610+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF067N65S3 Power Field Effect Transistor, MOSFET, N-channel, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V New74965+$34.106750+$32.6491200+$31.8329500+$31.62881000+$31.42482500+$31.19165000+$31.04587500+$30.9001 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power Field Effect Transistor, MOSFET, N-channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V80935+$15.283750+$14.6306200+$14.2648500+$14.17341000+$14.08192500+$13.97745000+$13.91217500+$13.8468 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCP400N80Z Power Field Effect Transistor, MOSFET, N-channel, 14 A, 800 V, 0.34 ohm, 10 V, 4.5 V New53255+$12.311950+$11.7858200+$11.4911500+$11.41751000+$11.34382500+$11.25965000+$11.20707500+$11.1544 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH47N60_F133 Power Field Effect Transistor, MOSFET, N-channel, 47 A, 600 V, 0.058 ohm, 10 V, 3 V94061+$87.878410+$84.0576100+$83.3699250+$82.8349500+$81.99441000+$81.61232500+$81.07745000+$80.6189 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF190N60 Power Field Effect Transistor, MOSFET, N-channel, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V8712 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP8N80C Power Field Effect Transistor, MOSFET, N-channel, 8 A, 800 V, 1.29 ohm, 10 V, 5 V9764 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQPF7N80C 功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V1960 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCPF400N80Z 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V9884 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP7N80C 功率场效应管, MOSFET, N沟道, 6.6 A, 800 V, 1.57 ohm, 10 V, 5 V9604 -
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Category: Medium high voltage MOS transistorDescription: SuperFET® 和 SuperFET® II N 通道 MOSFET，Fairchild Semiconductor Fairchild 使用超级结技术增加了 SuperFET® II 高电压功率 MOSFET 系列。 它提供最佳坚固主体二极管性能，适用于要求高功率密度、系统效率和可靠性的交流-直流开关模式电源 (SMPS) 应用，如服务器、电信、计算、工业电源、UPS/ESS、太阳能逆变器和照明应用。 利用先进的电荷平衡技术，设计人员可实现更高效经济的高性能解决方案，可占用更少板空间并提高可靠性。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。2829 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQP8N60C 功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 1 ohm, 10 V, 4 V5500 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB070N65S3 功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.062 ohm, 10 V, 4.5 V 新5567 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQD1N80TM Power Field Effect Transistor, MOSFET, N-channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V5249 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB20N60 功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V2786 -
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Category: Medium high voltage MOS transistorDescription: SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。5179 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FQPF3N80C 功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V7980 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCB11N60 Power Field Effect Transistor, MOSFET, N-channel, 11 A, 600 V, 320 Mohm, 10 V, 5 V27975+$14.402750+$13.7872200+$13.4425500+$13.35641000+$13.27022500+$13.17175000+$13.11027500+$13.0486
